前往 etch中文(繁體)翻譯:劍橋詞典
常見etch問答
延伸文章資訊etch depth depends on a number of factors, most importantly the width of the feature that needed ...
一般來說乾蝕刻依照產生電漿的模式分三種:(1) PE (Plasma Etching), (2) RIE (Reactive Ion Etching) ... 此時,為蝕刻Cr層,大多使用wet...
... 創新技術可滿足挑戰性持續提高的製程要求轉折點(例如: 3D NAND、EUV 圖案化和FOWLP)。 alt-image. Taiwan Traditional - Home | App...
etch depth depends on a number of factors, most importantly the width of the feature that needed ...
一般來說乾蝕刻依照產生電漿的模式分三種:(1) PE (Plasma Etching), (2) RIE (Reactive Ion Etching) ... 此時,為蝕刻Cr層,大多使用wet...
... 創新技術可滿足挑戰性持續提高的製程要求轉折點(例如: 3D NAND、EUV 圖案化和FOWLP)。 alt-image. Taiwan Traditional - Home | App...